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IRFP460NPBF Datasheet (PDF)

0.1. irfp460npbf.pdf Size:161K _international_rectifier

PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character

0.2. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay

IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura

 6.1. irfp460n.pdf Size:94K _international_rectifier

PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

Цоколёвка

IRFP460 выполнен в усиленном корпусе TO-247, который применяется там, где высокие уровни мощности не допускают использование универсального ТО-220, и немного превосходит более раннюю версию ТО-218. Для крепления его на радиатор имеется специальное изолированное отверстием в центре. Если смотреть на маркировку (рисунок ниже), то слева направо находятся выводы: затвора (З), стока (С) и истока (И).

Устройство не содержит свинца (Pb-free), о чём указанно в самом начале технического описания (datasheet). Допускается его монтаж на плату с помощью дешёвых оловянно-свинцовых припоев, никак не влияющих на последующую работу изделия в целом. Этим моментом пользуются производители, везущие свою продукцию в страны, где пока не требуется выполнение стандартов по соблюдению экологических норм.

IRFP460APBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP460APBF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 280
W

Предельно допустимое напряжение сток-исток |Uds|: 500
V

Предельно допустимое напряжение затвор-исток |Ugs|: 30
V

Пороговое напряжение включения |Ugs(th)|: 4
V

Максимально допустимый постоянный ток стока |Id|: 20
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 105
nC

Время нарастания (tr): 55
ns

Выходная емкость (Cd): 480
pf

Сопротивление сток-исток открытого транзистора (Rds): 0.27
Ohm

Тип корпуса:

IRFP460APBF
Datasheet (PDF)

0.1. irfp460apbf.pdf Size:206K _international_rectifier

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

0.2. irfp460apbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 6.1. irfp460as.pdf Size:115K _international_rectifier

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

6.2. irfp460a.pdf Size:95K _international_rectifier

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 6.3. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

Другие MOSFET… IRFP450N
, IRFP450NPBF
, IRFP450PBF
, IRFP450R
, IRFP451R
, IRFP452R
, IRFP453R
, IRFP4568PBF
, APT50M38JLL
, IRFP460B
, IRFP460C
, IRFP460LCPBF
, IRFP460N
, IRFP460NPBF
, IRFP460P
, IRFP460PBF
, IRFP462
.

IRFP460A Datasheet (PDF)

0.1. irfp460as.pdf Size:115K _international_rectifier

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

0.2. irfp460apbf.pdf Size:206K _international_rectifier

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

 0.3. irfp460a.pdf Size:95K _international_rectifier

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

0.4. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

 0.5. irfp460apbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

IRFP460PBF Datasheet (PDF)

0.1. irfp460pbf irfp460 sihfp460.pdf Size:156K _vishay

IRFP460, SiHFP460Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.27RoHS* Isolated Central Mounting HoleQg (Max.) (nC) 210COMPLIANT Fast SwitchingQgs (nC) 29Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive RequirementsD Le

6.1. irfp460p.pdf Size:154K _international_rectifier

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

6.2. irfp460p.pdf Size:172K _infineon

PD-93946AIRFP460P Dynamic dv/dt RatingHEXFET Power MOSFET Repetitive Avalanche RatedD Isolated Central Mounting HoleVDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27G Solder Plated for ReflowingID = 20ADescriptionSThird Generation HEXFETs from International Rectifierprovide the designer with the best combination of f

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Datasheet Download — International Rectifier

Номер произв IRFP460A
Описание Power MOSFET
Производители International Rectifier
логотип  

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PD- 91880
SMPS MOSFET
IRFP460A
Applications

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

HEXFETPower MOSFET

VDSS

500V
Rds(on) max

0.27Ω

ID

20A
Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified ( See AN1001)

TO-247AC G D S

Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
20
13
80
280
2.2
± 30
3.8
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:

l Full Bridge

l PFC Boost

Notes through are on page 8

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6/23/99

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IRFP460A

Static @ TJ = 25°C (unless otherwise specified)

Parameter
Min. Typ. Max. Units
Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

500 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS∆TJ Breakdown Voltage Temp. Coefficient ––– 0.61 –––

V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance ––– ––– 0.27 Ω VGS = 10V, ID = 12A

VGS(th)

Gate Threshold Voltage

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

IDSS Drain-to-Source Leakage Current

––– ––– 25
––– ––– 250

µA VDS = 500V, VGS = 0V

VDS = 400V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage

––– ––– 100 nA VGS = 30V

––– ––– -100

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter
Min. Typ. Max. Units
Conditions

gfs Forward Transconductance

Qg Total Gate Charge

Qgs Gate-to-Source Charge

Qgd Gate-to-Drain («Miller») Charge

td(on)

Turn-On Delay Time

tr Rise Time

td(off)

Turn-Off Delay Time

tf Fall Time

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

Coss Output Capacitance

Coss Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

11 ––– ––– S VDS = 50V, ID = 12A

––– ––– 105

ID = 20A

––– ––– 26 nC VDS = 400V

––– ––– 42

VGS = 10V, See Fig. 6 and 13

––– 18 –––

VDD = 250V

––– 55 ––– ns ID = 20A

––– 45 –––

RG = 4.3Ω

––– 39 –––

RD = 13Ω,See Fig. 10

––– 3100 –––

VGS = 0V

––– 480 –––

VDS = 25V

––– 18 ––– pF ƒ = 1.0MHz, See Fig. 5
––– 4430 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

––– 130 –––
––– 140 –––

VGS = 0V, VDS = 400V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 400V

Parameter
Typ.
Max.
Units

EAS Single Pulse Avalanche Energy

IAR Avalanche Current

EAR Repetitive Avalanche Energy

Thermal Resistance
––– 960 mJ
––– 20 A
––– 28 mJ
Parameter
Typ.
Max.
Units

RθJC

RθCS

RθJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
0.24
–––
0.45
––– °C/W
40
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

––– ––– 20
––– ––– 80
MOSFET symbol

A showing the

integral reverse
p-n junction diode.
G
D
S

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse RecoveryCharge

ton Forward Turn-On Time

2

––– ––– 1.8 V TJ = 25°C, IS = 20A, VGS = 0V

––– 480 710 ns TJ = 25°C, IF = 20A

––– 5.0 7.5 µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRFP460A
100
10
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1
4.5V
0.1
0.1
20µs PULSE WIDTH

TJ = 25 °C

1 10

VDS , Drain-to-Source Voltage (V)

100

Fig 1. Typical Output Characteristics

100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
20µs PULSE WIDTH

TJ = 150 °C

1
1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

TJ = 150 ° C

10

TJ = 25 °C

1
0.1
4.0

V DS= 50V

20µs PULSE WIDTH
5.0 6.0 7.0 8.0

VGS , Gate-to-Source Voltage (V)

9.0

Fig 3. Typical Transfer Characteristics

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3.0 ID = 192A0A

2.5
2.0
1.5
1.0
0.5

VGS = 10V

0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature
3

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IRFP460LC Datasheet (PDF)

0.1. irfp460lc.pdf Size:154K _international_rectifier

PD — 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

0.2. irfp460lcpbf.pdf Size:205K _international_rectifier

PD — 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu

 0.3. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

0.4. irfp460lc sihfp460lc.pdf Size:1133K _infineon

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

Электрические параметры

Стоит учитывать, что даже кратковременное превышение значений указанных выше величин может привести к порче изделия. Для того, чтобы оно прослужило стабильно долгие годы, необходимо предусмотреть 30% запас от максимальных значений, а также отвод тела от корпуса посредством радиатора. Ниже приведены электрические параметры транзистора, при тестовых (номинальных) режимах эксплуатации.

Транзистор выделяется довольно низким сопротивлением открытого канала Rds(on) (до 0,27 Ом) по сравнению с более ранними версиями подобных устройств.

Аналоги

У IRFP460 есть достойный аналог. Чаще всего вместо него рекомендуют установить относительно недорогой транзистор STW20NK50Z (STM) или более мощный SPW20N60C3 (Infineon Technologies). Оба устройства исполнены в корпусе ТО-247 и имеют похожую распиновку. Полностью идентичным также является SiHFP460 (Vishay).

В настоящее время существуют обновлённые версии транзистора IRFP460LC и IRFP460A от компании Vishay. Они имеет сравнительно лучшие характеристики относительно рассматриваемого, но по основным параметрам почти ничем не отличаются. Например, оба выдерживают более высокое напряжение между стоком-истоком (VGS до 30 В), имеют сниженную выходную/входную/проходную ёмкость и заряд затвора.

IRFP460LCPBF Datasheet (PDF)

0.1. irfp460lcpbf.pdf Size:205K _international_rectifier

PD — 94902IRFP460LCPbF Lead-Free12/19/03Document Number: 91235 www.vishay.com1IRFP460LCPbFDocument Number: 91235 www.vishay.com2IRFP460LCPbFDocument Number: 91235 www.vishay.com3IRFP460LCPbFDocument Number: 91235 www.vishay.com4IRFP460LCPbFDocument Number: 91235 www.vishay.com5IRFP460LCPbFDocument Number: 91235 www.vishay.com6IRFP460LCPbFDocu

5.1. irfp460lc.pdf Size:154K _international_rectifier

PD — 9.1232IRFP460LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementEnhanced 30V Vgs Rating VDSS = 500VReduced Ciss, Coss, CrssIsolated Central Mounting HoleRDS(on) = 0.27Dynamic dv/dt RatedRepetitive Avalanche RatedID = 20ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional

5.2. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

 5.3. irfp460lc sihfp460lc.pdf Size:1133K _infineon

IRFP460LC, SiHFP460LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.27 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 120COMPLIANT Reduced Ciss, Coss, CrssQgs (nC) 32 Isolated Central Mounting HoleQgd (nC) 49 Dynamic dV/dt RatingConfiguratio

IRFP460APBF Datasheet (PDF)

0.1. irfp460apbf.pdf Size:206K _international_rectifier

PD- 94853SMPS MOSFETIRFP460APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.27 20Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanc

0.2. irfp460apbf.pdf Size:212K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP460APBFFEATURESWith TO-247 packagingUninterruptible power supplyHigh speed switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 6.1. irfp460as.pdf Size:115K _international_rectifier

PD-94011ASMPS MOSFETIRFP460ASHEXFET Power MOSFETApplications SMPS, UPS, Welding and High SpeedVDSS Rds(on) max IDPower Switching500V 0.27 20ABenefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mountingDescriptionThird

6.2. irfp460a.pdf Size:95K _international_rectifier

PD- 91880SMPS MOSFETIRFP460AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

 6.3. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP460A, SiHFP460AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 105 COMPLIANTRuggednessQgs (nC) 26 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 42 and CurrentConfigurat

IRF460 Datasheet (PDF)

0.1. irf460.pdf Size:140K _international_rectifier

PD -90467REPETITIVE AVALANCHE AND dv/dt RATED IRF460500V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF460 500V 0.27 21The HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design ach

0.2. irf460b irf460c.pdf Size:413K _nell

RoHS IRF460 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET20A, 500VoltsDESCRIPTIOND The Nell IRF460 is a three-terminal silicon devicewith current conduction capability of 20A, fast switchingspeed, low on-state resistance, breakdown voltagerating of 500V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

 0.3. irf460-f2f.pdf Size:271K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

0.4. irf460.pdf Size:230K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive Requirements100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamp

 0.5. irf460-f2.pdf Size:256K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF460DESCRIPTIONRepetitive Avalanche RatingsDynamic dv/dt RatingHermetically SealedSimple Drive RequirementsEase of ParallelingAPPLICATIONSDesigned for applications such as switching powerSupplies ,motor controls ,inverters ,choppers ,audioamplifiers and high energy pulse circuits.ABSOLUTE MAXIMUM RATINGS

IRFP460N Datasheet (PDF)

0.1. irfp460n.pdf Size:94K _international_rectifier

PD-94098SMPS MOSFETIRFP460NHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current

0.2. irfp460npbf.pdf Size:161K _international_rectifier

PD-94809SMPS MOSFETIRFP460NPbFHEXFET Power MOSFETApplications Switch Mode Power Supply ( SMPS )VDSS Rds(on) max ID Uninterruptable Power Supply500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-FreeBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Character

 0.3. irfp460n irfp460npbf irfp460n sihfp460n sihfp460n.pdf Size:158K _vishay

IRFP460N, SiHFP460NVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500AvailableRequirementRDS(on) ()VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 124 COMPLIANTRuggednessQgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 57Configura