Транзистор irfp260n

IRFP260NPBF Datasheet (PDF)

0.1. irfp260npbf.pdf Size:180K _international_rectifier

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

0.2. irfp260npbf.pdf Size:180K _infineon

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

 0.3. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

IRFP260N Datasheet PDF — International Rectifier

Part Number IRFP260N
Description Power MOSFET
Manufacturers International Rectifier 
Logo  

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PD — 94004B
IRFP260N

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

HEXFETPower MOSFET

D

VDSS = 200V

RDS(on) = 0.04Ω

G

ID = 50A

S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance

RθJC

RθCS

RθJA

www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
50
35
200
300
2.0
±20
560
50
30
10
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.50
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/08/04

IRFP260N
50
50
40
40
30
30
20
20
10
10

0 25
25
50 75 100 125 150 175

50TCTC, C7, 5aCsaesTe1eTmepmeprae1rt2ua5rtuer(e°(C1°5)C) 175

Fig 9. Maximum Drain Current Vs.

Case Temperature
1

VDS

VGS

RG

RD

D.U.T.
10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V+- DD

Fig 10a. Switching Time Test Circuit

VDS

90%
10%

VGS

td(on) tr

td(off) tf

Fig 10b. Switching Time Waveforms

D = 0.50

0.1 0.20

0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)

PDM

t1

t2

0.0001
Notes:

1. Duty factor D = t1 / t 2

2. Peak TJ= P DM x ZthJC + TC

0.001
0.01

t1, Rectangular Pulse Duration (sec)

0.1
1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Part Number Description Manufacturers
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IRFP260N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP260N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300
W

Предельно допустимое напряжение сток-исток |Uds|: 200
V

Предельно допустимое напряжение затвор-исток |Ugs|: 20
V

Максимально допустимый постоянный ток стока |Id|: 49
A

Общий заряд затвора (Qg): 156
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.04
Ohm

Тип корпуса:

IRFP260N
Datasheet (PDF)

0.1. irfp260n.pdf Size:122K _international_rectifier

PD — 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

0.2. irfp260npbf.pdf Size:180K _international_rectifier

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

 0.3. irfp260npbf.pdf Size:180K _infineon

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

0.4. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.5. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Другие MOSFET… IRFL4315
, IRFML8244
, IRFP1405
, IRFP150M
, IRFP150V
, IRFP250M
, IRFP250N
, IRFP260M
, APT50M38JFLL
, IRFP2907
, IRFP2907Z
, IRFP3077
, IRFP3206
, IRFP3306
, IRFP3415
, IRFP3703
, IRFP4004
.

IRFP260M Datasheet (PDF)

0.1. irfp260mpbf.pdf Size:634K _international_rectifier

PD — 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

0.2. irfp260mpbf.pdf Size:634K _infineon

PD — 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 0.3. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

IRFP260N Datasheet (PDF)

0.1. irfp260n.pdf Size:122K _international_rectifier

PD — 94004AIRFP260NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.04G Fully Avalanche Rated Ease of ParallelingID = 50AS Simple Drive RequirementsDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extreme

0.2. irfp260npbf.pdf Size:180K _international_rectifier

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

 0.3. irfp260npbf.pdf Size:180K _infineon

PD — 95010AIRFP260NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techni

0.4. irfp260n.pdf Size:242K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260NIIRFP260NFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingFully Avalanche RatedABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.5. irfp260npbf.pdf Size:212K _inchange_semiconductor

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP260NPBFFEATURESWith TO-247 packagingEase of parallelingHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

IRFP260MPBF Datasheet (PDF)

0.1. irfp260mpbf.pdf Size:634K _international_rectifier

PD — 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

0.2. irfp260mpbf.pdf Size:634K _infineon

PD — 96293IRFP260MPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingVDSS = 200Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.04l Fully Avalanche RatedGl Ease of ParallelingID = 50Al Simple Drive RequirementsSl Lead-FreeDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniq

 6.1. irfp260m.pdf Size:247K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP260MIIRFP260MFEATURESStatic drain-source on-resistance:RDS(on)40mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr

Datasheet Download — International Rectifier

Номер произв IRFP260N
Описание Power MOSFET
Производители International Rectifier
логотип  

1Page

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PD — 94004B
IRFP260N

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

l Fully Avalanche Rated

l Ease of Paralleling

l Simple Drive Requirements

HEXFETPower MOSFET

D

VDSS = 200V

RDS(on) = 0.04Ω

G

ID = 50A

S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings

ID @ TC = 25°C

ID @ TC = 100°C

IDM

PD @TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TJ

TSTG

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance

RθJC

RθCS

RθJA

www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
50
35
200
300
2.0
±20
560
50
30
10
-55 to +175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
0.50
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/08/04

No Preview Available !

IRFP260N

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS∆TJ

RDS(on)

VGS(th)

gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

IDSS Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain («Miller») Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

LD Internal Drain Inductance

LS

Ciss

Coss

Crss

Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
200
–––
–––
2.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.26 –––
––– 0.04
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 234
––– 38
––– 110
17 –––
60 –––
55 –––
48 –––
5.0 –––
13 –––
4057 –––
603 –––
161 –––
Units
V
V/°C

V
S
µA
nA
nC
ns
nH
pF
Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 28A

VDS = VGS, ID = 250µA

VDS = 50V, ID = 28A

VDS = 200V, VGS = 0V

VDS = 160V, VGS = 0V, TJ = 150°C

VGS = 20V

VGS = -20V

ID = 28A

VDS = 160V

VGS = 10V

VDD = 100V

ID = 28A

RG = 1.8Ω

VGS = 10V

Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S

VGS = 0V

VDS = 25V

ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter

IS Continuous Source Current

(Body Diode)

ISM Pulsed Source Current

(Body Diode)

VSD Diode Forward Voltage

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

ton Forward Turn-On Time

Min. Typ. Max. Units
Conditions
––– ––– 50
––– ––– 200
MOSFET symbol

A showing the

integral reverse
p-n junction diode.
G
D
S

––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V

––– 268 402 ns TJ = 25°C, IF = 28A

––– 1.9 2.8 µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Starting TJ = 25°C, L = 1.5mH

RG = 25Ω, IAS = 28A.

ISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

Pulse width ≤ 400µs; duty cycle ≤ 2%.

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1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
4.5V
1
0.1
0.1
20µs PULSE WIDTH

TJ = 25 °C

1 10 100

VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

1000
100

TJ = 175° C

TJ = 25°C

10
VDS= 50V
20µs PULSE WIDTH
1
4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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1000
100
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
IRFP260N
4.5V
1
0.1
0.1
20µs PULSE WIDTH

TJ = 175°C

1 10 100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

3.5 ID = 50A

3.0
2.5
2.0
1.5
1.0
0.5

VGS = 10V

0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig 4. Normalized On-Resistance

Vs. Temperature
3

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