Содержание
IRFS730 Datasheet (PDF)
0.1. irfs730 irfs731 irfs732 irfs733.pdf Size:309K _1
0.2. irfs730 irfs731.pdf Size:286K _1
0.3. irfs730b.pdf Size:904K _fairchild_semi
November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
0.4. irfs730a.pdf Size:506K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
IRF730S Datasheet (PDF)
0.1. irf730s.pdf Size:895K _international_rectifier
PD — 95115IRF730SPbF Lead-Free3/16/04Document Number: 91048 www.vishay.com1IRF730SPbFDocument Number: 91048 www.vishay.com2IRF730SPbFDocument Number: 91048 www.vishay.com3IRF730SPbFDocument Number: 91048 www.vishay.com4IRF730SPbFDocument Number: 91048 www.vishay.com5IRF730SPbFDocument Number: 91048 www.vishay.com6IRF730SPbFD2Pak Package Outli
0.2. irf730spbf sihf730s.pdf Size:191K _vishay
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
0.3. irf730s sihf730s.pdf Size:165K _vishay
IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing
0.4. irf730s.pdf Size:1398K _kexin
SMD Type MOSFETN-Channel MOSFETIRF730S (KRF730S) Features VDS (V) =400V ID = 5.5 A (VGS = 10V) RDS(ON) 1 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 400V Gate-Source Voltage VGS 20 Tc = 25 5.5 Continuous Drain Current ID Tc
IRFS730A Datasheet (PDF)
0.1. irfs730a.pdf Size:506K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 3.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
7.1. irfs730 irfs731 irfs732 irfs733.pdf Size:309K _1
7.2. irfs730 irfs731.pdf Size:286K _1
7.3. irfs730b.pdf Size:904K _fairchild_semi
November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to
IRF730A MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF730A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 74
W
Предельно допустимое напряжение сток-исток |Uds|: 400
V
Предельно допустимое напряжение затвор-исток |Ugs|: 30
V
Пороговое напряжение включения |Ugs(th)|: 4.5
V
Максимально допустимый постоянный ток стока |Id|: 5.5
A
Максимальная температура канала (Tj): 150
°C
Общий заряд затвора (Qg): 22
nC
Выходная емкость (Cd): 600
pf
Сопротивление сток-исток открытого транзистора (Rds): 1
Ohm
Тип корпуса:
IRF730A
Datasheet (PDF)
0.1. irf730as.pdf Size:149K _international_rectifier
PD-93772ASMPS MOSFETIRF730AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanche
0.2. irf730as-l.pdf Size:309K _international_rectifier
PD-95114SMPS MOSFETIRF730AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2 TO-
0.3. irf730a.pdf Size:376K _international_rectifier
PD — 94976SMPS MOSFETIRF730APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch
0.4. irf730a.pdf Size:927K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
0.5. irf730alpbf irf730aspbf sihf730al sihf730as.pdf Size:199K _vishay
IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz
0.6. irf730apbf sihf730a.pdf Size:206K _vishay
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
0.7. irf730a sihf730a.pdf Size:206K _vishay
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
0.8. irf730a.pdf Size:234K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF730AFEATURESDrain Current I =5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power swi
Другие MOSFET… IRF720FI
, IRF720S
, IRF721
, IRF722
, IRF7220
, IRF723
, IRF7233
, IRF730
, IRF3205
, IRF730AL
, IRF730AS
, IRF730FI
, IRF730S
, IRF731
, IRF732
, IRF7321D2
, IRF7322D1
.
IRF730AS Datasheet (PDF)
0.1. irf730as.pdf Size:149K _international_rectifier
PD-93772ASMPS MOSFETIRF730AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanche
0.2. irf730as-l.pdf Size:309K _international_rectifier
PD-95114SMPS MOSFETIRF730AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2 TO-
0.3. irf730alpbf irf730aspbf sihf730al sihf730as.pdf Size:199K _vishay
IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz
HFP730 Datasheet (PDF)
0.1. hfp730.pdf Size:340K _shantou-huashan
Shantou Huashan Electronic Devices Co.,Ltd. HFP730 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 these power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3
0.2. hfp730u.pdf Size:202K _semihow
Oct 2013BVDSS = 400 VRDS(on) typ = 0.75 HFP730U ID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 13 nC (Typ.) Extended Safe Operating Area Lowe
0.3. hfp730s.pdf Size:299K _semihow
Nov 2013BVDSS = 400 VRDS(on) typ HFP730SID = 6.0 A400V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ.) Extended Safe Operating Area Lowe
IRF730A Datasheet (PDF)
0.1. irf730as.pdf Size:149K _international_rectifier
PD-93772ASMPS MOSFETIRF730AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanche
0.2. irf730as-l.pdf Size:309K _international_rectifier
PD-95114SMPS MOSFETIRF730AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2 TO-
0.3. irf730a.pdf Size:376K _international_rectifier
PD — 94976SMPS MOSFETIRF730APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch
0.4. irf730a.pdf Size:927K _samsung
Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
0.5. irf730alpbf irf730aspbf sihf730al sihf730as.pdf Size:199K _vishay
IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz
0.6. irf730apbf sihf730a.pdf Size:206K _vishay
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
0.7. irf730a sihf730a.pdf Size:206K _vishay
IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti
0.8. irf730a.pdf Size:234K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF730AFEATURESDrain Current I =5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power swi
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