IRFS640 Datasheet (PDF)
0.1. irfs640 irfs641.pdf Size:301K _1
0.2. irfs640b.pdf Size:922K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
0.3. irf640b irfs640b.pdf Size:916K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
0.4. irfs640a.pdf Size:508K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
IRF640NS Datasheet (PDF)
0.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.2. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.3. irf640ns.pdf Size:228K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
IRF640NPBF MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRF640NPBF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 150
W
Предельно допустимое напряжение сток-исток |Uds|: 200
V
Предельно допустимое напряжение затвор-исток |Ugs|: 20
V
Пороговое напряжение включения |Ugs(th)|: 4
V
Максимально допустимый постоянный ток стока |Id|: 18
A
Максимальная температура канала (Tj): 175
°C
Общий заряд затвора (Qg): 67
nC
Время нарастания (tr): 19
ns
Выходная емкость (Cd): 185
pf
Сопротивление сток-исток открытого транзистора (Rds): 0.15
Ohm
Тип корпуса:
IRF640NPBF
Datasheet (PDF)
0.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.2. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
7.1. irf640n.pdf Size:155K _international_rectifier
PD — 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi
7.2. irf640ns.pdf Size:228K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
7.3. irf640nl.pdf Size:244K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
7.4. irf640n.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
Другие MOSFET… SMG2301
, SMG2301P
, SMG2302
, SMG2302N
, SMG2305
, SMG2305P
, SMG2305PE
, SMG2306A
, IRF1404
, SMG2306NE
, SMG2310A
, SMG2310N
, SMG2314N
, SMG2314NE
, SMG2318N
, SMG2319P
, SMG2321P
.
IRF640NPBF Datasheet (PDF)
0.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.2. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
7.1. irf640n.pdf Size:155K _international_rectifier
PD — 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi
7.2. irf640ns.pdf Size:228K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
7.3. irf640nl.pdf Size:244K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
7.4. irf640n.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
IRF640SPBF Datasheet (PDF)
0.1. irf640lpbf irf640spbf sihf640l sihf640s.pdf Size:196K _vishay
IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi
7.1. irf640s.pdf Size:228K _international_rectifier
PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co
7.2. irf640s-l.pdf Size:935K _international_rectifier
PD — 95113IRF640S/LPbF Lead-Free3/16/04Document Number: 91037 www.vishay.com1IRF640S/LPbFDocument Number: 91037 www.vishay.com2IRF640S/LPbFDocument Number: 91037 www.vishay.com3IRF640S/LPbFDocument Number: 91037 www.vishay.com4IRF640S/LPbFDocument Number: 91037 www.vishay.com5IRF640S/LPbFDocument Number: 91037 www.vishay.com6IRF640S/LPbFDocum
IRFS640A Datasheet (PDF)
0.1. irfs640a.pdf Size:508K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
7.1. irfs640 irfs641.pdf Size:301K _1
7.2. irfs640b.pdf Size:922K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
7.3. irf640b irfs640b.pdf Size:916K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
IRFS640B Datasheet (PDF)
0.1. irfs640b.pdf Size:922K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
0.2. irf640b irfs640b.pdf Size:916K _fairchild_semi
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
7.1. irfs640 irfs641.pdf Size:301K _1
7.2. irfs640a.pdf Size:508K _samsung
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
IRF640N Datasheet (PDF)
0.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.2. irf640n.pdf Size:155K _international_rectifier
PD — 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi
0.3. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.4. irf640ns.pdf Size:228K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
0.5. irf640nl.pdf Size:244K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
0.6. irf640n.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
IRF640S Datasheet (PDF)
0.1. irf640s.pdf Size:228K _international_rectifier
PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co
0.2. irf640s-l.pdf Size:935K _international_rectifier
PD — 95113IRF640S/LPbF Lead-Free3/16/04Document Number: 91037 www.vishay.com1IRF640S/LPbFDocument Number: 91037 www.vishay.com2IRF640S/LPbFDocument Number: 91037 www.vishay.com3IRF640S/LPbFDocument Number: 91037 www.vishay.com4IRF640S/LPbFDocument Number: 91037 www.vishay.com5IRF640S/LPbFDocument Number: 91037 www.vishay.com6IRF640S/LPbFDocum
0.3. irf640lpbf irf640spbf sihf640l sihf640s.pdf Size:196K _vishay
IRF640S, IRF640L, SiHF640S, SiHF640LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 200 Surface MountRDS(on) ()VGS = 10 V 0.18 Low-Profile Through-HoleQg (Max.) (nC) 70 Available in Tape and ReelQgs (nC) 13 Dynamic dV/dt Rating 150 C Operating TemperatureQgd (nC) 39 Fast Swi
IRF640NSPBF Datasheet (PDF)
0.1. irf640nlpbf irf640npbf irf640nspbf.pdf Size:336K _international_rectifier
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
0.2. irf640npbf irf640nspbf irf640nlpbf.pdf Size:336K _infineon
PD — 95046AIRF640NPbFIRF640NSPbFl Advanced Process Technology IRF640NLPbFl Dynamic dv/dt RatingHEXFET Power MOSFETl 175C Operating Temperaturel Fast SwitchingDVDSS = 200Vl Fully Avalanche Ratedl Ease of Parallelingl Simple Drive Requirements RDS(on) = 0.15Gl Lead-FreeDescriptionID = 18AFifth Generation HEXFET Power MOSFETs fromSInternational Rectif
6.1. irf640ns.pdf Size:228K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
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