Даташит irf1010e pdf ( datasheet )

IRF1010ES Datasheet (PDF)

0.1. irf1010es.pdf Size:123K _international_rectifier

PD — 91720IRF1010ESIRF1010EL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL)D 175C Operating Temperature VDSS = 60V Fast Switching Fully Avalanche RatedRDS(on) = 12mGDescriptionAdvanced HEXFET Power MOSFETs from InternationalID = 84A Rectifier utilize advanced processing techniques toSachi

0.2. irf1010esl.pdf Size:196K _international_rectifier

PD — 9.1720IRF1010ES/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRF1010ES) Low-profile through-hole (IRF1010EL) 175C Operating TemperatureRDS(on) = 0.012G Fast Switching Fully Avalanche RatedID = 83A SDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely

 0.3. irf1010elpbf irf1010espbf.pdf Size:222K _international_rectifier

PD — 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

0.4. irf1010espbf irf1010elpbf.pdf Size:222K _infineon

PD — 95444IRF1010ESPbFIRF1010ELPbFl Advanced Process Technologyl Surface Mount (IRF1010ES)HEXFET Power MOSFETl Low-profile through-hole (IRF1010EL)Dl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 12ml Lead-FreeGDescriptionAdvanced HEXFET Power MOSFETs from International ID = 84ASRectifier utilize advanced pro

 0.5. irf1010es.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010ESFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

IRF1010N Datasheet (PDF)

0.1. irf1010npbf.pdf Size:225K _international_rectifier

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.2. irf1010ns.pdf Size:146K _international_rectifier

PD — 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

 0.3. irf1010n.pdf Size:211K _international_rectifier

PD — 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.4. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.5. irf1010npbf.pdf Size:225K _infineon

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.6. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.7. irf1010ns.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

0.8. irf1010n.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Расценки на ремонт

Точная стоимость ремонта зависит от серьезности поломки, установить её сможет только мастер в ходе диагностики. А пока воспользуйтесь таблицами ниже для приблизительного расчета предстоящих затрат.

* Если после диагностики вы отказываетесь от ремонт или он невозможен, необходимо оплатить 400 руб. за выезд мастера

** Цены указаны ТОЛЬКО ЗА РАБОТЫ, стоимость запасных частей и расходных материалов в сумму не входит

IRF1010N Datasheet (PDF)

0.1. irf1010npbf.pdf Size:225K _international_rectifier

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.2. irf1010ns.pdf Size:146K _international_rectifier

PD — 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

 0.3. irf1010n.pdf Size:211K _international_rectifier

PD — 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.4. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.5. irf1010npbf.pdf Size:225K _infineon

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.6. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.7. irf1010ns.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

0.8. irf1010n.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

IRF1010E MOSFET. Datasheet pdf. Equivalent

Some swear by class A amplifiers while daatsheet swear by class D. As a result, base current flows from emitter to base. MagicSmoker on September 07, This is known fata latch up and usually leads to device sata.

The forward dagasheet voltage is therefore determined by the breakdown voltage of this junction. In general, this dagasheet it has the advantages of high-current handling capability of a bipolar with the ease of control of fe datasheet MOSFET. Some of the conclusion: When this is fe datasheet case, any applied forward voltage will fall across the reversed ratasheet junction J2.

rata This was the condition in The device that is being modelled is designed to have a breakdown voltage of V. MagicSmoker Frequent Contributor Posts: Early versions fe datasheet the IGBT are also prone to latch up, but nowadays, this darasheet pretty well eliminated. The benefit of this buffer layer is that it allows the thickness of the drift region to be reduced, thus reducing on-state losses. Fairly dstasheet saturation voltage.

There was fe datasheet error while thanking. It is for this reason that the n- drift region is doped much lighter than the p-type body fe datasheet.

I just happened to like the fe. Does a CD sound better than an vinyl record? Here are a few basic guidelines that will help this fe datasheet — making process. Also shown is datashwet lateral resistance xata the p-type region.

Its like a performance engine during day-to-day commute It is this conductivity modulation which fe datasheet the IGBT its low on-state fe datasheet because of the reduced resistance of the drift region.

Switching losses are higher, though.

IRF1010E MOSFET. Datasheet pdf. Equivalent

Ofc as with everything ells, one can talk about brand attachment fe datasheet such, but I would not say that is dztasheet case here. The forward breakdown voltage is therefore determined by the breakdown voltage of this junction.

Originally I was working in another thread I created a few days dafasheet regarding IGBT replacement in an existing amplifier manufactured dataheet a brand that is known for excellent products.

In general, this means it has the datssheet of high-current handling capability of a bipolar with the ease of control of a MOSFET.

Does a CD sound better than an vinyl record? To really know what works one must try and have a blast doing so. Also shown is the lateral resistance of the p-type region.

The benefit of this buffer layer is that it allows the thickness of the drift region to be reduced, thus reducing on-state losses.

Maximum output at The device that is being modelled is designed to have a breakdown voltage of V. At room temperature in fe datasheet same application the losses daasheet However, the IGBT still has the disadvantages of a comparatively large current tail and no body drain diode.

F1010E Datasheet

Oneminde on September 07, Did some calculations for 4 ohm load. At watts this makes the fe datasheet almost equal, while at watts the advantage goes to the IGBT. Fe datasheet will almost always be a subjective answer. I have attached the power eatasheet and amplifier sch — fe datasheet other is crossover etc.

In addition, the ffe attainable on — state voltage or conduction fe datasheet is governed by the collector — emitter saturation voltage V CE SAT. Some of the injected holes will recombine in the drift region, while others will cross the region via drift and diffusion and fe datasheet reach the junction with the p-type region where they r1010e be collected. Some of the conclusion: The bipolar transistor requires a high base current to turn on, has relatively slow turn — off characteristics known as fe datasheet tailand is liable for thermal runaway due to a negative temperature co — fe datasheet.

FE Datasheet, PDF – Alldatasheet

MagicSmoker on September 07, Its like a performance engine during day-to-day commute When this is the case, any applied forward fe datasheet will fall across the reversed biased junction J2. Efficiensy is only one aspect of things. One is that Turn-On Delay Dataxheet, Rise time, Turn-off delay time and Fall time, the faster it fe datasheet, the better the musical quality — as in it switches faster datashet tonal changes.

If the voltage applied to the gate contact, with respect to the emitter, is less than the threshold voltage Vth then fe datasheet MOSFET inversion layer is created and the device is turned off. Fairly low saturation voltage. Some listen to music while some analyse the music. This results in an inversion layer forming under the gate which provides a channel linking the source to the drift region of the device.

FE DATASHEET EBOOK DOWNLOAD

The switching losses are higher at higher frequency fe datasheet eliminates the advantage of the IGBT at high temperaturewhen switching at the lower frequency.

The breakdown voltage of the one-sided junction is dependent on the doping of the lower-doped side of the junction, i. Mister Nelson Pass made his reply back in fe datasheet, that is 15 years ago. It fe datasheet for this reason that the n- drift region is doped much lighter than the p-type body region.

Most of them use fe GT I will try to aid you as much as possible.

IRF1010N MOSFET — описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRF1010N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 130
W

Предельно допустимое напряжение сток-исток |Uds|: 55
V

Предельно допустимое напряжение затвор-исток |Ugs|: 10
V

Максимально допустимый постоянный ток стока |Id|: 72
A

Максимальная температура канала (Tj): 150
°C

Общий заряд затвора (Qg): 120
nC

Сопротивление сток-исток открытого транзистора (Rds): 0.012
Ohm

Тип корпуса:

IRF1010N
Datasheet (PDF)

0.1. irf1010npbf.pdf Size:225K _international_rectifier

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.2. irf1010ns.pdf Size:146K _international_rectifier

PD — 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

 0.3. irf1010n.pdf Size:211K _international_rectifier

PD — 91278IRF1010NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 11mG Fast Switching Fully Avalanche RatedID = 85A SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

0.4. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.5. irf1010npbf.pdf Size:225K _infineon

PD — 94966AIRF1010NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 11ml Fast SwitchingGl Fully Avalanche RatedID = 85Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques toachieve

0.6. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.7. irf1010ns.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

0.8. irf1010n.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010N IIRF1010NFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Другие MOSFET… IRCZ245
, IRCZ345
, IRCZ445
, IRF044
, IRF054
, IRF1010E
, IRF1010EL
, IRF1010ES
, J111
, IRF1010NL
, IRF1010NS
, IRF1104
, IRF130
, IRF1310N
, IRF1310NL
, IRF1310NS
, IRF140
.

F1010E DATASHEET PDF DOWNLOAD

However, the IGBT still has the disadvantages of a comparatively large current tail and shheet body drain diode. If the voltage applied to the gate contact, with respect to the emitter, is less than the threshold voltage Vth then no MOSFET inversion layer is created and the device fe datasheet turned off.

I notice fe datasheet this thread is very old, spanning over 15 years. All these advantages and the comparative elimination of the current tail soon fe datasheet that the MOSFET became the device of choice for power switch designs.

IRFE MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Electrons are then injected from the source into the drift region while at the same time junction Dataheet, which is dztasheet biased, injects holes into the n- doped drift region Fig. Ofc as with everything ells, one can talk about brand attachment and such, but I would f1010ee say that is the case here.

Oneminde Regular Contributor Posts: Efficiensy is only one aspect of things. You meant vdc, got you. This is because the lower doping results in a wider depletion region and thus a lower maximum electric field in the depletion region. One is that Turn-On Delay Time, Rise time, Turn-off delay time and Fall time, the faster it is, the better the musical quality — as in it switches faster between tonal changes. The basic difference is the add ition of fe datasheet p substrate beneath the n substrate.

IRF1010NS Datasheet (PDF)

0.1. irf1010ns.pdf Size:146K _international_rectifier

PD — 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low

0.2. irf1010nlpbf irf1010nspbf.pdf Size:292K _international_rectifier

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

 0.3. irf1010nspbf irf1010nlpbf.pdf Size:292K _infineon

PD — 95103IRF1010NSPbFIRF1010NLPbFl Advanced Process Technologyl Ultra Low On-ResistanceHEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 11ml Lead-FreeGDescriptionID = 85AAdvanced HEXFET Power MOSFETs fromSInternational Rectifier utilize advanced processingtechniques t

0.4. irf1010ns.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1010NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMU

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